controlled doping

The sheet resistance of the films can be controlled by changing doping amount of F ions and choosing favorite process conditions, the minimum is 10 Ω/ □.

通过改变掺杂量和选择合适的工艺条件可控制掺氟SnO2薄膜的方块电阻，其最小方块电阻值达10Ω/□。

Controlled Synthesis and Doping of Single-Crystalline 6H-SiC Nanowire and Its Optic Properties

单晶6H-SiC纳米线的可控掺杂及光学特性

Firstly, high-quality a-Si films are prepared using PECVD. Resistivity of a-Si film is well controlled by gas doping.

论文首先研究了采用PECVD制备高品质a-Si薄膜的工艺，通过气相掺杂有效地调整了薄膜电阻率；

The Curie temperature, coercivity and permeability can be controlled by doping barium ferrite with other elements. That enhanced the performance of barium ferrite.

利用不同的元素掺杂可以对钡铁氧体的居里温度、矫顽力、磁导率进行控制，从而提高钡铁氧体性能。

He performances and features of the impregnated cathode with alloy matrix, the impregnated cathode with controlled doping alloy film and the impregnated alloy matrix cathode with alloy film coating have been clearly reviewed in this paper.

明确地概述了合金基底浸渍阴极，可控合金浸渍阴极，覆合金膜浸渍合金基底阴极的性能和特征。

The structural transformation of the symmetric icosahedron is strongly related to the initial configuration, atomic number and atomic distribution, and can be controlled by doping hetero atoms and changing their compositions and distributions.

匀称的20面体结构转变与团簇的初始结构、原子数和组元分布密切相关。而且，这种相变可以通过不同物性组元的添加、含量和原子分布的改变进行控制。